IRFZ48N Инвертор

IRFZ48 Datasheet and Replacement. Cross Reference Search

IRFZ48 Datasheet and Replacement Type Designator: IRFZ48 Type of Transistor: MOSFET Type of Control Channel: N -Channel Pd ⓘ - Maximum Power Dissipation: 190 W |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V |Id| ⓘ - Maximum Drain Current: 50 A Tj ⓘ - Maximum Junction Temperature: 175 °C tr ⓘ - Rise Time: 250 nS

IRFZ48N Datasheet, PDF

The IRFZ48N is a type of power MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. MOSFETs like the IRFZ48N are commonly used in electronic devices for …

IRFZ48N Datasheet

IRFZ48N General Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

IRFZ48N datasheet(1/8 Pages) PHILIPS

Similar Description - IRFZ48N: Manufacturer: Part # Datasheet: Description: NXP Semiconductors: IRFZ24N: 64Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000: IRFZ44N: 64Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000: BSP100: 111Kb / 8P:

IRFIZ48NPbF Product Datasheet

IRFIZ48NPbF 3 2017-04-27 Fig. 2 Typical Output Characteristics Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature Fig. 1 Typical Output Characteristics 0.1 1 10 100 1000 0.1 1 10 100 I, Drain-to-Source Current (A) D V, Drain-to-Source Voltage (V)DS

IRFZ48N Datasheet, PDF

IRFZ48N: 2Mb / 31P: SEMICONDUCTORS International Rectifier: IRFZ48NL 134Kb / 10P: Advanced Process Technology IRFZ48NLPBF 297Kb / 10P: HEXFET Power MOSFET IRFZ48NPBF 181Kb / 8P: HEXFET Power MOSFET IRFZ48NPBF 232Kb / 8P: ADVANCED PROCESS TECHNOLOGY VBsemi Electronics Co.,... IRFZ48NPBF 1Mb / 9P: N-Channel 60 …

NXP Semiconductors IRFZ48N Datasheet

NXP Semiconductors IRFZ48N Datasheet. Power Field-Effect Transistor, 53A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET. View Pricing. Download.

IRFZ48N Datasheet (PDF)

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ''trench'' technology. The device features very low on …

IRFZ48NS

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

IRFZ48N

IRFZ48N 55V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters ...

IRFIZ48N by Infineon Technologies Datasheet | DigiKey

View IRFIZ48N by Infineon Technologies datasheet for technical specifications, dimensions and more at DigiKey.

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Maximum Effective Transient Thermal Impedance, Junction-to-Case. Ground Plane. Low Leakage Inductance Current Transformer. dv/dt controlled by RG. ISD controlled by Duty Factor "D"

IRFZ48N pdf, IRFZ48N Description, IRFZ48N Datasheet, IRFZ48N …

Part #: IRFZ48N. Description: N-channel enhancement mode TrenchMOS transistor. File Size: 65.22 Kbytes. Manufacturer: NXP Semiconductors.

IRFZ48N Transistor Pinout, Uses, Equivalent, Features and More

IRFZ48N is a power MOSFET manufactured in TO-220 transistor package. It is a ruggedized transistor and can be used for general uses in variety of applications. Moreover the transistor possesses variety of features which makes it reliable for many commercial applications, some features are fast switching capability, high temperature survival of ...

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IRFZ48N 2 S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)† p-n junction diode.

IRFZ44N Datasheet(PDF)

IRFZ48N: 65Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000: PHN203: 98Kb / 7P: Dual N-channel enhancement mode TrenchMOS transistor January 1999 Rev 1.000: PHN210: 109Kb / 7P: …

IRFZ48NL Datasheet(PDF)

Part #: IRFZ48NL. Download. File Size: 134Kbytes. Page: 10 Pages. Description: Advanced Process Technology. Manufacturer: International Rectifier.

= 55V = 0.014 D Pak

IRFZ48NS/LPbF 2 ˘ˇˆ ˙ ˝˛˚ ˜˚ ! " #$ ˝ % " ! & % ! '' (("!% ! )*+˚,,$ Parameter Min. Typ. Max. Units Conditions

IRFZ48NS Datasheet(PDF)

Part #: IRFZ48NS. Download. File Size: 134Kbytes. Page: 10 Pages. Description: Advanced Process Technology. Manufacturer: International Rectifier.

Transistor IRFZ48N MOS-N-FET 55 V 64 A 0.016 Оhm 140 W

Buy Transistor IRFZ48N MOS-N-FET 55 V, 64 A, 0.016 Оhm, 140 W INTERNATIONAL RECTIFIER for € 1.53 through Vikiwat online store. Fast shipping on all MOSFET orders within Europe. Free delivery with Speedy within Bulgaria for online orders over BGN 150Incl.

IRFZ48N

IRFZ48N Даташит. Основные параметры и характеристики. Поиск аналогов Наименование прибора: IRFZ48N Тип транзистора: MOSFET Полярность: N Pd ⓘ - Максимальная рассеиваемая мощность: 130 W

IRFZ48N Datasheet (PDF)

Part #: IRFZ48N. Download. File Size: 102Kbytes. Page: 8 Pages. Description: HEXFET Power MOSFET. Manufacturer: International Rectifier.

IRFR48Z

IR MOSFET™ N-channel Power MOSFET ; DPAK TO-252 package; 11 mOhm;

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IRFZ48N PRELIMINARY HEXFET® Power MOSFET PD -----Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve …

AUTOMOTIVE GRADE AUIRFZ48N

1 10/3/11 AUTOMOTIVE GRADE PD - 97732 HEXFET® Power MOSFET AUIRFZ48N Features ˘ ˇ ˆ ˙˘ ˝ˇ ˇ˘ ˛˚˜ ! " ˇ˘ ˙" ˇ# $ ˇ % ˘ˇ ˘ $# ˇ

IRFZ48N Datasheet

Download the IRFZ48N datasheet for International Rectifier. Power mosfet. Available from Infineon Technologies AG at $0.44 (2329 In Stock)

IRFZ48N pdf, IRFZ48N Description, IRFZ48N Datasheet, IRFZ48N …

IRFZ48N: 65Kb / 8P: N-channel enhancement mode TrenchMOS transistor February 1999 Rev 1.000: Inchange Semiconductor ... IRFZ48N: 121Kb / 2P: isc N-Channel MOSFET Transistor Kersemi Electronic Co.,... IRFZ48N: 856Kb / 2P: Fast Switching List of Unclassifed Man... IRFZ48N: 2Mb / 31P: SEMICONDUCTORS EVER SEMICONDUCTOR CO.,... IRFZ48N: …

Транзистор IRFZ48N: Характеристики, аналоги ...

Цоколевка Практически все производители выпускают IRFZ48N в корпусе ТО-220AB. Для того, чтобы определить распиновку, необходимо расположить транзистор так, чтобы видеть его маркировку, при этом …

IRFZ48N

The IRFZ48N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRFZ48N meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Advanced high cell density Trench technology

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This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely …

IRFZ48N Datasheet(PDF)

Part #: IRFZ48N. Download. File Size: 121Kbytes. Page: 2 Pages. Description: isc N-Channel MOSFET Transistor. Manufacturer: Inchange Semiconductor Company Limited.

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8 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at for sales contact information.09/2010 ˘ ˇ ˘ INTERNATIONAL PART NUMBER